cystech electronics corp. spec. no. : c240m3 issued date : 2012.10.18 revised date : 2013.08.07 page no. : 1/8 BTB5839M3 cystek product specification low vcesat pnp epitaxial planar transistor BTB5839M3 features ? low v ce (sat), v ce (sat)=-0.3 v (max), at i c / i b = -2a / -0.1a ? excellent current gain characteristics ? pb-free lead plating and halogen-free package symbol outline absolute maximum ratings (ta=25 c) btb5893m3 sot-89 b base c collector e emitter b c e parameter symbol limits unit collector-base voltage v cbo -50 v collector-emitter voltage v ceo -30 v emitter-base voltage v ebo -7 v collector current (dc) i c -3 a collector current (pulse) i cp -5 (note 1) a power dissipation pd 0.6 w power dissipation pd 2 (note 2) w operating junction and storage temp erature range tj ; tstg -55~+150 c
cystech electronics corp. spec. no. : c240m3 issued date : 2012.10.18 revised date : 2013.08.07 page no. : 2/8 BTB5839M3 cystek product specification thermal data parameter symbol value unit thermal resistance, junction-to-case, max r th,j-c 30.4 c/w thermal resistance, junction-to-ambient, max r th,j-a 208 c/w thermal resistance, junction-to-ambient, max (note 2) r th,j-a 62.5 c/w note : 1. single pulse , pw=10ms 2. when mounting on a 40 40 0.7 mm ceramic board. 3. human body model, 1.5k in series with 100pf characteristics (ta=25 c) symbol min. typ. max. unit test conditions bv cbo -50 - - v i c =-50 a, i e =0 bv ceo -30 - - v i c =-1ma, i b =0 bv ebo -7 - - v i e =-50 a, i c =0 i cbo - - -100 na v cb =-50v, i e =0 i ebo - - -100 na v eb =-7v, i c =0 *v ce(sat) - -0.05 -0.2 v i c =-400ma, i b =-20ma *v ce(sat) - -0.2 -0.3 v i c =-2a, i b =-100ma *r ce(sat) - 0.1 0.15 i c =-2a, i b =-100ma *v be(sat) - -1 -1.2 v i c =-2a, i b =-200ma *h fe 1 160 - - - v ce =-2v, i c =-100ma *h fe 2 180 - 390 - v ce =-2v, i c =-500ma *h fe 3 150 - - - v ce =-2v, i c =-1a f t - 190 - mhz v ce =-10v, i c =-0.5a, f=100mhz cob - 33 - pf v cb =-10v, f =1mhz *pulse test : pulse width 380 s, duty cycle 2% ordering information device package shipping BTB5839M3-t2-g sot-89 (pb-free lead plating an d halogen-free package) 1000 pcs / tape & reel
cystech electronics corp. spec. no. : c240m3 issued date : 2012.10.18 revised date : 2013.08.07 page no. : 3/8 BTB5839M3 cystek product specification typical characteristics emitter grounded output characteristics 0 0.05 0.1 0.15 0.2 0.25 0.3 0123456 -vce, collector-to-emitter voltage(v) -ic, collector current(a) 200ua 300ua 400ua 500ua 1ma -ib=100ua emitter grounded output characteristics 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0123456 -vce, collector-to-emitter voltage(v) -ic, collector current(a) 1.5ma 2ma 2.5ma 5ma -ib=500ua emitter grounded output characteristics 0 0.5 1 1.5 2 2.5 3 3.5 4 0123456 -vce, collector-to-emitter voltage(v) -ic, collector current(a) 4ma 6ma 8ma 20ma -ib=2ma emitter grounded output characteristics 0 1 2 3 4 5 6 0123456 -vce, collector-to-emitter voltage(v) -ic, collector current(a) 20ma 10ma 15m a 25ma 50ma -ib=5ma current gain vs collector current 10 100 1000 1 10 100 1000 10000 -ic, collector current(ma) current gain---hfe ta=125c ta=75c ta=25c ta=0c ta=-40c vce=-2v current gain vs collector current 10 100 1000 1 10 100 1000 10000 -ic, collector current(ma) current gain---hfe ta=125c ta= 75c ta= 25c ta=0c ta=-40c vce=-1v
cystech electronics corp. spec. no. : c240m3 issued date : 2012.10.18 revised date : 2013.08.07 page no. : 4/8 BTB5839M3 cystek product specification typical characteristics(cont.) current gain vs collector current 10 100 1000 1 10 100 1000 10000 -ic, collector current(ma) current gain---hfe ta=125c ta=75c ta=25c ta=0c ta=-40c vce=-5v saturation voltage vs collector current 10 100 1000 1 10 100 1000 10000 -ic, collector current(ma) saturation voltage---(mv) ta=125c ta=75c ta=25c ta=0c ta=-40c vcesat@ic=50ib on voltage vs collector current 100 1000 10000 1 10 100 1000 10000 -ic, collector current(ma) on voltage---(mv) vbeon@vce=-1v ta=-40c ta=0c ta=25c ta=75c ta=125c saturation voltage vs collector current 100 1000 10000 1 10 100 1000 10000 -ic, collector currentma) saturation voltage---(mv) vbesat@ic=50ib ta=-40c ta=0c ta=25c ta=75c ta=125c cutoff frequency vs collector current 10 100 1000 1 10 100 1000 -ic, collector current(ma) cutoff frequency---ft(mhz) vce=-2v capacitance vs reverse-biased voltage 10 100 1000 0.1 1 10 100 -vr, reverse-biased voltage(v) capacitance---(pf) cib cob
cystech electronics corp. spec. no. : c240m3 issued date : 2012.10.18 revised date : 2013.08.07 page no. : 5/8 BTB5839M3 cystek product specification typical characteristics(cont.) power derating curves 0 0.4 0.8 1.2 1.6 2 2.4 0 25 50 75 100 125 150 175 ambient temperature---ta() power dissipation---pd(w) see note 2 on page 1
cystech electronics corp. spec. no. : c240m3 issued date : 2012.10.18 revised date : 2013.08.07 page no. : 6/8 BTB5839M3 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c240m3 issued date : 2012.10.18 revised date : 2013.08.07 page no. : 7/8 BTB5839M3 cystek product specification recommended wave soldering condition soldering time product peak temperature pb-free devices 5 +1/-1 seconds 260 +0/-5 c recommended temperature profile for ir reflow pb-free assembly profile feature sn-pb eutectic assembly average ramp-up rate 3 c/second max. 3 c/second max. (tsmax to tp) preheat 100 c 150 c ? temperature min(t s min) ? temperature max(t s max) 150 c 200 c ? time(ts min to ts max ) 60-120 seconds 60-180 seconds time maintained above: ? temperature (t l ) 183 c 217 c ? time (t l ) 60-150 seconds 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak 10-30 seconds 20-40 seconds temperature(tp) ramp down rate 6 c/second max. 6 c/second max. 6 minutes max. 8 minutes max. time 25 c to peak temperature note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c240m3 issued date : 2012.10.18 revised date : 2013.08.07 page no. : 8/8 BTB5839M3 cystek product specification sot-89 dimension marking: inches millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.1732 0.1811 4.40 4.60 f 0.0591 typ 1.50 typ b 0.1551 0.1673 3.94 4.25 g 0.1181 typ 3.00 typ c 0.0610 ref 1.55 ref h 0.0551 0.0630 1.40 1.60 d 0.0906 0.1024 2.30 2.60 i 0.0138 0.0173 0.35 0.44 e 0.0126 0.0205 0.32 0.52 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance . bf e f g c b a 3 2 1 device code h i d date code style: pin 1. base 2. collector 3. emitter 3-lead sot-89 plastic surface mounted package cystek package code: m3
|
